Study on radio frequency reactive sputtering deposition of silicon nitride thin films

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N2 processing pressure with varied N2 partial pressure, and carried out sy...

Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not bee...

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be...

Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films

In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well as a way of sample placement in the reactor, on optical properties and deposition rate of silicon nitride (SiNx) thin films. The influence of the process parameters has been determined using Taguchi's orthog...